Hydrogen gas sensing properties of MoS2/Si heterojunction

Sensors and Actuators, B: Chemical

Volumn 211, Issue , 2015, Pages 537-543

  Liu, Yunjie ^a   Hao, Lanzhong ^a   Gao, Wei ^a   Wu, Zhipeng ^b   Lin, Yali ^b   Li, Guixia ^c   Guo, Wenyue ^a   Yu, Lianqing ^a   Zeng, Huizhong ^b   Zhu, Jun ^b   Zhang, Wanli ^b  

^a CHINA UNIVERSITY OF PETROLEUM   (China)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c QINGDAO AGRICULTURAL UNIVERSITY   (China)

Author keywords

Films; Heterojunction; Hydrogen; MoS2; Sensing

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; FILMS; HYDROGEN; MOLYBDENUM COMPOUNDS; X RAY DIFFRACTION;

HIGH SENSITIVITY; HYDROGEN GAS SENSING; MOLYBDENUM DISULFIDE; MOS2; SENSING; SENSING MECHANISM; SENSING PERFORMANCE; STABLE STEADY STATE;

HETEROJUNCTIONS;

EID: 84923106108     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2015.01.129     Document Type: Article

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