Hydrogen sensing performances of Pt/i-ZnO/GaN metal-insulator-semiconductor diodes

Sensors and Actuators, B: Chemical

Volumn 157, Issue 2, 2011, Pages 460-465

  Lee, Hsin Ying ^a   Huang, Hung Lin ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Hydrogen gas sensors; Intrinsic ZnO layer; Metal insulator semiconductor structure; Vapor cooling condensation system

Indexed keywords

BAND GAP ENERGY; BARRIER HEIGHTS; GAN; HIGH QUALITY; HYDROGEN ABSORPTION; HYDROGEN GAS SENSORS; HYDROGEN-SENSING; INSULATING LAYERS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR DIODES; METAL-INSULATOR-SEMICONDUCTORS; OPERATION TEMPERATURE; ROOM TEMPERATURE; SERIES RESISTANCES; WURTZITE STRUCTURE; ZNO; ZNO FILMS; ZNO LAYERS;

GALLIUM NITRIDE; GAS DETECTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PHASE INTERFACES; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SENSORS; ZINC OXIDE; ZINC SULFIDE;

HYDROGEN;

EID: 79959654303     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.05.001     Document Type: Article

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