Epitaxial stabilization of pseudomorphic α-Ga22O3 on sapphire (0001)

Applied Physics Express

Volumn 8, Issue 1, 2015, Pages

  Schewski, Robert ^a   Wagner, Günter ^a   Baldini, Michele ^a   Gogova, Daniela ^a   Galazka, Zbigniew ^a   Schulz, Tobias ^a   Remmele, Thilo ^a   Markurt, Toni ^a   Von Wenckstern, Holger ^b   Grundmann, Marius ^b   Bierwagen, Oliver ^c   Vogt, Patrick ^c   Albrecht, Martin ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; STABILIZATION; TRANSMISSION ELECTRON MICROSCOPY;

C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; EPITAXIAL STABILIZATION; GROWTH METHOD; HETEROEPITAXIAL; INDUCED STRAIN; ROTATIONAL DOMAINS; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

SAPPHIRE;

EID: 84920520412     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.8.011101     Document Type: Article

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