Epitaxial Nd-doped α-(A\1-xGax) 2O3 films on sapphire for solid-state waveguide lasers

Optics Letters

Volumn 35, Issue 22, 2010, Pages 3793-3795

  Kumaran, Raveen ^a   Tiedje, Thomas ^b   Webster, Scott E ^a   Penson, Shawn ^a   Li, Wei ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b UNIVERSITY OF VICTORIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AL ALLOYS; EMISSION PEAKS; FILM COMPOSITION; GALLIUM OXIDES; GRADED INDEX; ND-DOPED; PEAK POSITION; SAPPHIRE SUBSTRATES; SCATTERING LOSS; TUNABLE LASING; UNIT-CELL VOLUME; WAVEGUIDE LASERS; WAVELENGTH RANGES;

EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEODYMIUM; NEODYMIUM LASERS; SAPPHIRE; SOLID STATE LASERS; WAVEGUIDES;

OXIDE FILMS;

EID: 78549247468     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.35.003793     Document Type: Article

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