SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

Applied Surface Science

Volumn 320, Issue , 2014, Pages 188-194

  Choi, Min Jung ^a,b   Cho, Cheol Jin ^a,c   Kim, Kwang Chon ^a   Pyeon, Jung Joon ^a   Park, Hyung Ho ^b   Kim, Hyo Suk ^d   Han, Jeong Hwan ^d   Kim, Chang Gyoun ^d   Chung, Taek Mo ^d   Park, Tae Joo ^e   Kwon, Beomjin ^a   Jeong, Doo Seok ^a,f   Baek, Seung Hyub ^a,f   Kang, Chong Yun ^a   Kim, Jin Sang ^a   Kim, Seong Keun ^a,f  

^a Korea Institute of Science and Technology   (South Korea)

^b Yonsei University   (South Korea)

^c Seoul National University   (South Korea)

^d Korea Research Institute of Chemical Technology   (South Korea)

^e Hanyang University   (South Korea)

^f University of Science and Technology (UST)   (South Korea)

Author keywords

Atomic layer deposition; Self limiting growth; Sn(dmamp)2; SnO2

Indexed keywords

ASPECT RATIO; ATOMS; AUGER ELECTRON SPECTROSCOPY; CARBON; CARBON FILMS; DECOMPOSITION; GROWTH TEMPERATURE; MASS SPECTROMETRY; NITROGEN; THIN FILMS;

CARBON AND NITROGEN; DETECTION LIMITS; IMPURITY CONTENT; LIMITING BEHAVIOR; MASS SPECTROSCOPY; SELF-LIMITING GROWTHS; SNO2; TEMPERATURE RANGE;

ATOMIC LAYER DEPOSITION;

EID: 84919348731     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.09.054     Document Type: Article

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