Electrostatically reversible polarity of dual-gated graphene transistors

IEEE Transactions on Nanotechnology

Volumn 13, Issue 6, 2014, Pages 1039-1043

  Nakaharai, Shu ^a,b   Iijima, Tomohiko ^a   Ogawa, Shinichi ^a   Li, Song Lin ^b   Tsukagoshi, Kazuhito ^b   Sato, Shintaro ^a   Yokoyama, Naoki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Nanoelectronics; thin film transistors

Indexed keywords

GRAPHENE; NANOELECTRONICS;

AMBIPOLAR; GATE BIAS; GRAPHENE TRANSISTORS; HELIUM ION BEAMS; LARGE CURRENT; ON-OFF RATIO; ORDERS OF MAGNITUDE; THIN-FILM TRANSISTOR (TFTS);

TRANSISTORS;

EID: 84910656495     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2014.2313134     Document Type: Article

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