Hall mobility in multicrystalline silicon

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Schindler, F ^a   Geilker, J ^a   Kwapil, W ^a   Warta, W ^a   Schubert, M C ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; DIFFUSION LENGTH; EXPERIMENTAL DATA; HALL MEASUREMENTS; LIFETIME MEASUREMENTS; MAJORITY CARRIERS; MOBILITY REDUCTION; MONOCRYSTALLINE; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE; P-TYPE; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC SOLAR ENERGY; POTENTIAL BARRIERS; QUANTITATIVE EVALUATION; THEORETICAL CALCULATIONS; VALENCIA;

DEFECTS; DISLOCATIONS (CRYSTALS); GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; HALL MOBILITY; MONOCRYSTALLINE SILICON; PHOTOVOLTAIC EFFECTS; POLYSILICON; SINGLE CRYSTALS; SOLAR ENERGY; SOLAR POWER GENERATION;

CARRIER MOBILITY;

EID: 80052419386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3622620     Document Type: Article

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