Low temperature near band edge recombination dynamics in ZnO nanorods

Journal of Applied Physics

Volumn 116, Issue 12, 2014, Pages

  Urgessa, Z N ^a   Botha, J R ^a   Eriksson, M O ^b   Mbulanga, C M ^a   Dobson, S R ^a   Tankio Djiokap, S R ^a   Karlsson, K F ^b   Khranovskyy, V ^b   Yakimova, R ^b   Holtz, Per Olof ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; EXCITONS; II-VI SEMICONDUCTORS; NANORODS; OXIDE MINERALS; ZINC OXIDE;

ANNEAL TEMPERATURES; ANNEALING TEMPERATURES; BASAL PLANE STACKING FAULTS; BULK RECOMBINATION; CRYSTAL QUALITIES; RECOMBINATION DYNAMICS; SURFACE IMPURITIES; TIME-RESOLVED PHOTOLUMINESCENCE;

TEMPERATURE;

EID: 84908355276     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4896488     Document Type: Article

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