Crystal phase engineered quantum wells in ZnO nanowires

Nanotechnology

Volumn 24, Issue 21, 2013, Pages

  Khranovskyy, V ^a   Glushenkov, Alexey M ^b   Chen, Y ^b   Khalid, A ^c   Zhang, H ^c   Hultman, L ^a   Monemar, B ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b DEAKIN UNIVERSITY   (Australia)

^c TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; ENGINEERING APPROACHES; LUMINESCENCE MECHANISMS; MATERIAL INTERFACES; PHOTOLUMINESCENCE PROPERTIES; POTENTIAL BARRIERS; TYPE II BAND ALIGNMENTS; ZNO NANOWIRES (NWS);

BINDING ENERGY; EXCITONS; INTERFACES (MATERIALS); NANOWIRES; ZINC; ZINC OXIDE; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM WELLS;

NANOWIRE; ZINC OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ENERGY TRANSFER; LUMINESCENCE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; PHASE TRANSITION; QUANTUM THEORY; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ENERGY TRANSFER; LUMINESCENT MEASUREMENTS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOWIRES; PARTICLE SIZE; PHASE TRANSITION; QUANTUM THEORY; SURFACE PROPERTIES; ZINC OXIDE;

EID: 84876882814     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/21/215202     Document Type: Article

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