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Journal of Luminescence

Volumn 132, Issue 8, 2012, Pages 1890-1895

Photoluminescence characterization of vertically aligned ZnO microrods

(4) Dumcenco, D O a,c Huang, Y S a Kuo, D H a Tiong, K K b

a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

c INSTITUTE OF APPLIED PHYSICS (Moldova)

Author keywords

Excitons; II VI semiconductors; Photoluminescence

Indexed keywords

BOUND EXCITON; EMISSION FEATURES; EMISSION LINES; EMISSION RANGE; FREE ELECTRON; FREE EXCITONS; HIGH-POWER; II-VI SEMICONDUCTOR; LINE SHAPE; LONGITUDINAL OPTICAL; LOW TEMPERATURES; NANO-SIZED; NEAR BAND EDGE EMISSIONS; NEUTRAL ACCEPTORS; NEUTRAL DONOR; NI-BASED CATALYST; OPTICAL CHARACTERIZATION; PHONON REPLICA; PHOTOLUMINESCENCE CHARACTERIZATION; PL SPECTRA; POWER-LAW EXPRESSION; RADIATIVE RECOMBINATION; SURFACE EXCITONS; TEMPERATURE-DEPENDENT MEASUREMENTS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; TWO-ELECTRON SATELLITES; VERTICALLY ALIGNED; ZNO; ZNO MICRORODS;

EXCITONS; PHOTOLUMINESCENCE;

ZINC OXIDE;

EID: 84861123506 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2012.02.037 Document Type: Article

Times cited : (16)

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