Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

ACS Applied Materials and Interfaces

Volumn 6, Issue 19, 2014, Pages 16755-16762

  Bresnehan, Michael S ^a   Bhimanapati, Ganesh R ^a   Wang, Ke ^a   Snyder, David W ^a,b   Robinson, Joshua A ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

CVD; dielectrics; graphene; h BN; hexagonal boron nitride

Indexed keywords

BORON NITRIDE; CARBON; CARBON FILMS; COPPER; DIELECTRIC MATERIALS; GRAPHENE; NITRIDES; VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRICAL BREAKDOWN STRENGTHS; H-BN; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); OXYGEN CONTAMINATION; POLYCRYSTALLINE COPPER; SURFACE FEATURE;

CHEMICAL VAPOR DEPOSITION;

EID: 84907887470     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am503844u     Document Type: Article

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