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Volumn 42, Issue 11, 2014, Pages 1103-1122

A family of memristor-based reactance-less oscillators

Author keywords

Memristors; Reactance less oscillator; Voltage controlled oscillator

Indexed keywords

CIRCUIT OSCILLATIONS; CIRCUIT SIMULATION; OSCILLISTORS; VARIABLE FREQUENCY OSCILLATORS;

EID: 84907718389     PISSN: 00989886     EISSN: 1097007X     Source Type: Journal    
DOI: 10.1002/cta.1908     Document Type: Article
Times cited : (61)

References (51)
  • 1
    • 0015127532 scopus 로고
    • Memristor-the missing circuit element
    • Chua L. Memristor-the missing circuit element. IEEE Transactions on Circuit Theory 1971; 18(5):507-519.
    • (1971) IEEE Transactions on Circuit Theory , vol.18 , Issue.5 , pp. 507-519
    • Chua, L.1
  • 2
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • Chua L, Kang, SM. Memristive devices and systems. Proceedings of the IEEE 1976; 64(2):209-223.
    • (1976) Proceedings of the IEEE , vol.64 , Issue.2 , pp. 209-223
    • Chua, L.1    Kang, S.M.2
  • 4
    • 0001331485 scopus 로고    scopus 로고
    • Reproducible switching effect in thin oxide films for memory applications
    • Beck A, Bednorz J, Gerber C, Rossel C, Widmer D. Reproducible switching effect in thin oxide films for memory applications. Applied Physics Letters 2000; 77(1):139-141.
    • (2000) Applied Physics Letters , vol.77 , Issue.1 , pp. 139-141
    • Beck, A.1    Bednorz, J.2    Gerber, C.3    Rossel, C.4    Widmer, D.5
  • 5
    • 18844370086 scopus 로고    scopus 로고
    • Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films
    • Kriegerand J, Spitzer S. Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films. in Non-Volatile Memory Technology Symposium, 2004, 121-124.
    • Non-Volatile Memory Technology Symposium, 2004 , pp. 121-124
    • Kriegerand, J.1    Spitzer, S.2
  • 6
    • 84911383955 scopus 로고    scopus 로고
    • Electrode structure having at least two oxide layers and non-volatile memory device having the same
    • US Patent
    • Genrikh S, Cho C, Yoo I, Lee E, Cho S, Moon C, et al. Electrode structure having at least two oxide layers and non-volatile memory device having the same. US Patent 7,417,271, 2008.
    • (2008)
    • Genrikh, S.1    Cho, C.2    Yoo, I.3    Lee, E.4    Cho, S.5    Moon, C.6
  • 9
    • 84861125640 scopus 로고    scopus 로고
    • Memristors: Devices, models, and applications
    • Mazumder P, Kang S, Waser R. Memristors: devices, models, and applications. Proceedings of the IEEE 2012; 100 (6):1911-1919.
    • (2012) Proceedings of the IEEE , vol.100 , Issue.6 , pp. 1911-1919
    • Mazumder, P.1    Kang, S.2    Waser, R.3
  • 13
    • 63649138779 scopus 로고    scopus 로고
    • High-density crossbar arrays based on a Si memristive system
    • Jo SH, Kim K-H, Lu W. High-density crossbar arrays based on a Si memristive system Nano Letters 2009; 9 ( 2):870-874.
    • (2009) Nano Letters , vol.9 , Issue.2 , pp. 870-874
    • Jo, S.H.1    Kim, K.-H.2    Lu, W.3
  • 16
    • 84871285395 scopus 로고    scopus 로고
    • Analysis of current-voltage characteristics for memristive elements in pattern recognition systems
    • Corinto F, Ascoli A, Gilli M. Analysis of current-voltage characteristics for memristive elements in pattern recognition systems. International Journal of Circuit Theory and Applications 2012, http://dx.doi.org/10.1002/cta.1804.
    • (2012) International Journal of Circuit Theory and Applications
    • Corinto, F.1    Ascoli, A.2    Gilli, M.3
  • 18
    • 80054902499 scopus 로고    scopus 로고
    • Solving mazes with memristors: A massively parallel approach
    • Pershin YV, Di Ventra M. Solving mazes with memristors: a massively parallel approach," Physical Review E 2011; 84:046703.
    • (2011) Physical Review E , vol.84 , pp. 046703
    • Pershin, Y.V.1    Di Ventra, M.2
  • 24
    • 77955050459 scopus 로고    scopus 로고
    • Memristive circuits simulate memcapacitors and meminductors
    • Pershin Y, Di Ventra M. Memristive circuits simulate memcapacitors and meminductors," Electronics Letters 2010; 46(7):517-518.
    • (2010) Electronics Letters , vol.46 , Issue.7 , pp. 517-518
    • Pershin, Y.1    Di Ventra, M.2
  • 28
    • 80051873596 scopus 로고    scopus 로고
    • Generalized model formemristor-based wien family oscillators
    • Talukdar A, Radwan AG, Salama KN. Generalized model formemristor-based wien family oscillators. Microelectronics Journal 2011; 42(9):1032-1038.
    • (2011) Microelectronics Journal , vol.42 , Issue.9 , pp. 1032-1038
    • Talukdar, A.1    Radwan, A.G.2    Salama, K.N.3
  • 29
    • 84857059767 scopus 로고    scopus 로고
    • Non linear dynamics of memristor based 3rd order oscillatory system
    • Talukdar A, Radwan AG, Salama KN. Non linear dynamics of memristor based 3rd order oscillatory system. Microelectronics Journal 2012; 43(3):169-175.
    • (2012) Microelectronics Journal , vol.43 , Issue.3 , pp. 169-175
    • Talukdar, A.1    Radwan, A.G.2    Salama, K.N.3
  • 34
    • 82455167171 scopus 로고    scopus 로고
    • Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
    • Strachan J, Torrezan A, Medeiros-Ribeiro G, Williams R. Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology 2011; 22(50):505402.
    • (2011) Nanotechnology , vol.22 , Issue.50 , pp. 505402
    • Strachan, J.1    Torrezan, A.2    Medeiros-Ribeiro, G.3    Williams, R.4
  • 40
    • 70350457460 scopus 로고    scopus 로고
    • Spice model of memristor with nonlinear dopant drift
    • Biolek Z, Biolek D, Biolkova V. Spice model of memristor with nonlinear dopant drift. Radioengineering 2009; 18 ( 2):210-214.
    • (2009) Radioengineering , vol.18 , Issue.2 , pp. 210-214
    • Biolek, Z.1    Biolek, D.2    Biolkova, V.3
  • 43
    • 84863705823 scopus 로고    scopus 로고
    • A boundary condition-based approach to the modeling of memristor nanostructures
    • Corinto F, Ascoli A. A boundary condition-based approach to the modeling of memristor nanostructures. IEEE Transactions on Circuits and Systems I 2012; 59(11):2713-2726.
    • (2012) IEEE Transactions on Circuits and Systems I , vol.59 , Issue.11 , pp. 2713-2726
    • Corinto, F.1    Ascoli, A.2
  • 47
    • 84911378266 scopus 로고    scopus 로고
    • Memristor model
    • May [Online]. Available
    • Zidan MA, Radwan AG, Salama KN. Memristor model. Matlab Central, May 2011. [Online]. Available: http://www.mathworks.com/matlabcentral/ fi leexchange/31530
    • (2011) Matlab Central
    • Zidan, M.A.1    Radwan, A.G.2    Salama, K.N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.