Self-adaptive write circuit for low-power and variation-tolerant memristors

IEEE Transactions on Nanotechnology

Volumn 9, Issue 6, 2010, Pages 675-678

  Jo, Kwan Hee ^a   Jung, Chul Moon ^a   Min, Kyeong Sik ^a   Kang, Sung Mo ^b  

^a Kookmin University   (South Korea)

^b Embedded Systems and Automation Laboratory   (United States)

Author keywords

Low power memristors; resistive memories; self adjustment circuit; variation tolerant memristors

Indexed keywords

FUTURE MEMORY; LARGE CURRENT; LOW POWER; POWER CONSUMPTION; POWER-LOSSES; PULSEWIDTHS; PVT VARIATIONS; RESISTIVE MEMORIES; SELF-ADAPTIVE; SELF-ADJUSTING; SELF-ADJUSTMENT; SIMULATION RESULT; VARIATION-TOLERANT MEMRISTORS; WRITE OPERATIONS; WRITING CURRENTS;

FLASH MEMORY; PASSIVE FILTERS; VANADIUM;

RESISTORS;

EID: 78349261547     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2052108     Document Type: Article

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