BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise

IEEE Electron Device Letters

Volumn 21, Issue 1, 2000, Pages 30-33

  Martin, Scott ^a   Li, G P ^b   Guan, Huinan ^b   D'Souza, Sandeep ^a  

^a Rockwell Semiconductor Systems   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE SCATTERING; MATHEMATICAL MODELS; PERTURBATION TECHNIQUES; SPURIOUS SIGNAL NOISE;

FLAT-BAND VOLTAGE PERTURBATION; RANDOM TELEGRAPH SIGNALS (RTA);

TELEGRAPH;

EID: 0033896542     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.817443     Document Type: Article

References (19)

1. P. L. Olsen, "Evaluate 1/f effects on oscillator phase noise''," Microw. RF, vol. 36, no. 8, p. 82, 1997.
2. G. D. Vendelin, A. M. Pavio, and U. L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques. New York: Wiley, 1990.
3. C. Hu, G. P. Li, E. Worley, and J. White, "Consideration of low-frequency noise in MOSFET's for analog performance," IEEE Electron Device Lett., vol. 17, p. 552, Dec. 1996.
4. S. Martin, G. P. Li, H. Guan, S. D'souza, M. Matloubian, G. Claudius, and C. Compton, "BSIM3 based RTS and 1/f noise models suitable for circuit simulators," in IEDM Tech. Dig., 1998.
5. S. Martin, G. P. Li, E. Worley, and J. White, "The gate bias and geometry dependence of random telegraph signal amplitudes," IEEE Trans. Electron Devices, vol. 18, Sept. 1997.
6. _, "Modeling the bias and scaling dependence of drain current fluctuations due to single carrier trapping in submicron MOSFET's," in IEEE 54th Device Research Conf. Proc., 1996, p. 116.
7. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," IEEE Trans. Elecron. Devices, vol. 37, Mar. 1990.
8. _, "Random telegraph noise of deep-submicrometer MOSFET's," IEEE Electron Device Lett., vol. 11, p. 90, Feb. 1990.
9. M. J. Uren, D. J. Day, and M. J. Kirton, "1/f and random telegraph signal noise in silicon metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 47, no. 11, p. 1195, 1985.
10. R. Jayaraman and C. Sodini, "A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon," IEEE Trans. Electron Devices, vol. 36, p. 1773, Sept. 1989.
11. Z. J. Ma, Z. H. Liu, Y. C. Cheng, P. K. Ko, and C. Hu, "New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurements," IEEE Trans. Electron Devices, vol. 41, p. 2205, Nov. 1994.
12. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, and J. Brini, "Improved analysis of low frequency noise in field-effect MOS transistors," Phys. Stat. Sol. (a), vol. 124, p. 571, 1991.
13. J.-T. Hsu, "Low frequency noise in short-channel MOSFET's degraded by Fowler-Nordheim and hot carrier injection," Microelectron. Eng., vol. 22, p. 285, 1993.
14. F. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, New York: Wiley, 1982.
15. BSIM3v3 Manual (Final Version), Univ. California (CITY?), 1995.
16. ocursive Greek chi and its application in device modeling and optimization," in Proc. Int. Semiconductor. Device Research Conf., Dec. 6-8, 1995, pp. 607-610.
17. K. Chen, H. Wann, P. K. Ko, and C. Hu, "The impact of device scaling and power supply change on CMOS gate performance," IEEE Electron Device Lett., vol. 17, pp. 202-204, May 1996.
18. R. Jayaraman and C. G. Sodini, "1/f noise interpretation of the effect of gate oxide nitridation and reoxidation on dielectric traps," IEEE Trans. Electron Devices, vol. 37, Jan. 1990.
19. H. Kimijima, T. Ohguro, B. Evans, B. Acker, J. Bloom, H. Mabuchi, D.-L. Kwong, E. Mirifuji, T. Yoshitomi, H. Momose, M. Kinugawa, Y. Katsumata, and H. lawai, "Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-submicron RF and analog CMOS," in Proc. Symp. VLSI Technol. Dig. Tech. Papers.