Unified embedded non-volatile memory for emerging mobile markets

Proceedings of the International Symposium on Low Power Electronics and Design

Volumn , Issue , 2014, Pages 131-136

  Lee, Kangho ^a   Kan, Jimmy J ^a   Kang, Seung H ^a  

^a QUALCOMM INC   (United States)

Author keywords

Connectivity; EFlash; Internet of things; Non volatile memory; RRAM; STT MRAM; TRAM

Indexed keywords

COMMERCE; DATA STORAGE EQUIPMENT; ENERGY EFFICIENCY; INTERNET OF THINGS; LOW POWER ELECTRONICS; MOBILE COMPUTING; MRAM DEVICES; RANDOM ACCESS STORAGE;

CONNECTIVITY; EFLASH; NON-VOLATILE MEMORY; RRAM; STT-MRAM; TRAM;

NONVOLATILE STORAGE;

EID: 84906821663     PISSN: 15334678     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/2627369.2631641     Document Type: Conference Paper

References (19)

1. A. Niebel. 2013. Semiconductors and Memory Shaping Up for Growth in 2013. (January 2013). Retrieved July 1, 2014 from http://www.kilopass.com/ semiconductors-and-memory-shaping-up-for-growth-in-2013
2. H. Hidaka, "Evolution of Embedded Flash Memory Technology for MCU", Proc. ICICDT, (May 2011), 1-4.
3. R. Strenz, "Embedded Flash Technologies and their Applications: Status & Outlook", Proc. IEDM, (Dec. 2011), 9.4.1-9.4.4.
4. K. Baker, "Embedded Nonvolatile Memories: A Key Enabler for Distributed Intelligence", Proc. IMW, (May 2012), 1-4.
5. E. Hsiao. 2013. Using Non-volatile Memory IP in System on Chip Designs. (June 2013). Retrieved June, 20 2014 from http://www.eetimes.com
6. MSP430FRxx series product spec. Retrieved June, 20 2014 from http://www.ti.com
7. AM1(MN101) series product spec, Retrieved June, 20 2014 from http://www.semicon.panasonic.co.jp
8. MR series product spec, Retrieved June, 20 2014 from http://www.everspin. com
9. C. Bohac. 2013. Comparing FRAM and MRAM. Application Note 02130. Everspin Technologies, Inc., Chandler, AZ.
10. G. Jan, L. Thomas, S. Le, Y.-J. Lee, H. Liu, J. Zhu, R.-Y. Tong, K. Pi, Y.-J. Wang, D. Shen, R. He, J. Haq, J. Teng, V. Lam, K. Huang, T. Zhong, T. Tomg, and P.-K. Wang, "Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories," Symp. VLSI, (June 2014)
11. H. Noguchi, K. Ikegami, N. Shimomura, T. Tetsufumi, J. Ito, and S. Fujita, "Highly Reliable and Low-Power Nonvolatile Cache Memory with Advanced Perpendicular STT-MRAM for High-Performance CPU", Symp. VLSI, (June 2014).
12. S. C. Bartling, S. Khanna, M. P. Clinton, S. R. Summerfelt, J. A. Rodriguez, H. P. McAdams, "An 8MHz 75uA/MHz Zero-Leakage Non-Volatile Logic-Based Cortex-MO MCU SoC Exhibiting 100% Digital State Retention at VDD=0V with <400ns Wakeup and Sleep Transitions", Proc. ISSCC, (Feb. 2013), 432-434.
13. N. Sakimura, Y. Tsuji, R. Nebashil, H. Honjo, A. Morioka, K. Ishihara, K. Kinoshita, S. Fukami, S. Miura, N. Kasai, T. Endoh, H. Ohno, T. Hanyu, and T. Sugibayashi, "A 90nm 20MHz Fully Nonvolatile Microcontroller for Standby-Power-Critical Applications", Proc. ISSCC, (Feb. 2014), 184-185.
14. iFixit. 2013. Teardown. (March 2013). Retrieved March 5, 2014 from http://www.ifixit.com
15. Tech Insights. 2013. Qualcomm Toq Smartwatch Sample Report. (Dec 2013). Retrieved March 5, 2014 from http://www.techinsights.com
16. N. Sakimura, T. Sugibayashi, R. Nebashi, and N. Kasai, "Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SOCs", JSSCC, (Aug. 2009), 2244-2250.
17. M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao, and H. Kano, "A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM," Proc. IEDM, (Dec. 2005), 459-462.
18. J. M. Slaughter, N. D. Rizzo, J. Janesky, R. Whig, F. B. Mancoff, D. Houssameddine, J. J. Sun, S. Aggarwal, K. Nagel, S. Deshpande, S. M. Alam, T. Andre and P. LoPresti, "High Density ST-MRAM Technology", Proc. IEDM, (Dec. 2012), 29.3.1-29.3.4.
19. S. H. Kang, "Embedded STT-MRAM for Energy-efficient and Cost-effective Mobile Systems", Symp. VLSI, (June 2014).