Carbon interlayer between CVD SiC and SiO2 in high-temperature passive oxidation

Journal of the American Ceramic Society

Volumn 97, Issue 5, 2014, Pages 1633-1637

  Katsui, Hirokazu ^a   Oguma, Miyuki ^a   Goto, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; PHASE INTERFACES; SILICON CARBIDE; THERMOGRAVIMETRIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

CARBON LAYERS; HIGH TEMPERATURE; HIGH-PURITY SILICON; OUTWARD DIFFUSION; OXIDATION BEHAVIORS; OXIDATION RATES; PASSIVE OXIDATION; TEMPERATURE RANGE;

OXIDATION;

EID: 84900850607     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12833     Document Type: Article

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