Oxidation behavior of chemically-vapor-deposited silicon carbide and silicon nitride from 1200° to 1600°C

Journal of the American Ceramic Society

Volumn 81, Issue 4, 1998, Pages 945-950

  Fox, Dennis S ^a,b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; OXIDATION; REACTION KINETICS; SILICA; SILICON CARBIDE; SILICON NITRIDE; SODIUM;

ISOTHERMAL OXIDATION;

CERAMIC MATRIX COMPOSITES;

EID: 0032050590     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02431.x     Document Type: Article

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