Computational synthesis of single-layer GaN on refractory materials

Applied Physics Letters

Volumn 105, Issue 5, 2014, Pages

  Singh, Arunima K ^a   Hennig, Richard G ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORIDES; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; INORGANIC COMPOUNDS; REFRACTORY MATERIALS; REFRACTORY METALS; STABILIZATION;

CHEMICAL INTERACTIONS; COMPUTATIONAL SYNTHESIS; DICHALCOGENIDES; ENERGY-BAND ALIGNMENT; EPITAXIAL STABILIZATION; EPITAXIAL SUBSTRATES; FUNCTIONALIZATIONS; THERMODYNAMIC STABILIZATION;

SUBSTRATES;

EID: 84905587355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4892351     Document Type: Article

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35. See supplementary material at http://dx.doi.org/10.1063/1.4892351 E-APPLAB-105-096431 for properties of GaN on other substrates.