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Volumn 7640, Issue , 2010, Pages

Freeform illumination sources: An experimental study of source-mask optimization for 22-nm SRAM cells

Author keywords

FlexRay; freeform illumination; negative tone development; SMO; source mask optimization; SRAM

Indexed keywords

MASKS;

EID: 84905509250     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.846918     Document Type: Conference Paper
Times cited : (41)

References (10)
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  • 2
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  • 3
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    • Performance of a programmable illuminator for generation of freeform sources on high NA immersion systems
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  • 4
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    • Performance of FlexRay: A fully programmable illumination system for generation of freeform sources on high-NA immersion systems
    • Mulder, M. et al., "Performance of FlexRay: a fully programmable illumination system for generation of freeform sources on high-NA immersion systems," Proc. SPIE 7640, 7640-59 (2010).
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    • Mulder, M.1
  • 5
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    • Imaging solutions for the 22nm node using 1.35NA
    • Engelen, A. et al., "Imaging solutions for the 22nm node using 1.35NA," Proc. SPIE 7274, 72741Q (2009).
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  • 6
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    • Source-mask co-optimization: Optimize design for imaging and impact of source complexity on lithography performance
    • Hsu, S. et al., "Source-mask co-optimization: optimize design for imaging and impact of source complexity on lithography performance," Proc. SPIE 7520, 75200D (2009).
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  • 7
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    • An innovative Source-Mask co-Optimization (SMO) method for extending low k1 imaging
    • Hsu, S. et al., "An innovative Source-Mask co-Optimization (SMO) method for extending low k1 imaging," Proc. SPIE 7140, 714010 (2008).
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  • 8
    • 77953489819 scopus 로고    scopus 로고
    • Resist material for negative tone development process
    • Tarutani, S. et al., "Resist material for negative tone development process," Proc. SPIE 7639, 7639-3 (2010).
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  • 9
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    • Printing the metal and contact layers for the 32- and 22-nm node: Comparing positive and negative tone development process
    • Van Look, L. et al., "Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process," Proc. SPIE 7640, 7640-69 (2010).
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  • 10
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    • Litho and patterning challenges for memory and logic applications at the 22-nm node
    • Finders, J. et al., "Litho and patterning challenges for memory and logic applications at the 22-nm node," Proc. SPIE 7640, 7640-11 (2010).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.