Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions

Materials Science in Semiconductor Processing

Volumn 27, Issue 1, 2014, Pages 343-351

  Khan, Majid ^a   Islam, Mohammad ^b,c   Akram, Aftab ^c   Qi, Zeming ^a   Li, Liangbin ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c NATIONAL UNIVERSITY OF SCIENCES AND TECHNOLOGY   (Pakistan)

Author keywords

Back contact; DC magnetron sputtering; Electrical resistivity; Molybdenum films; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUCKLING; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; MOLYBDENUM; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

AVERAGE SURFACE ROUGHNESS; BACK CONTACT; DC MAGNETRON SPUTTERING; MOLYBDENUM FILMS; SODA LIME GLASS SUBSTRATE; TENSILE RESIDUAL STRESS; THERMAL EXPANSION COEFFICIENTS; X-RAY DIFFRACTION STUDIES; DC PLASMA; RESIDUAL STRAINS; SPUTTERING CONDITIONS;

MOLYBDENUM PLATING; ELECTRIC CONDUCTIVITY;

EID: 84905036766     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2014.07.017     Document Type: Article

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