Investigation of thermal stability of Mo thin-films as the buffer layer and various Cu metallization as interconnection materials for thin film transistor-liquid crystal display applications

Thin Solid Films

Volumn 515, Issue 18, 2007, Pages 7209-7216

  Yen, Yee Wen ^a   Kuo, Yu Lin ^b   Chen, Jian Yu ^a   Lee, Chiapyng ^a   Lee, Chung Yu ^a,c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Case Western Reserve University   (United States)

^c AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Boundary diffusion; Buffer layer; Interconnection materials; Intermetallic compounds

Indexed keywords

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTROPLATING; INTERMETALLICS; LIQUID CRYSTAL DISPLAYS; METALLIZING; MOLYBDENUM; PHYSICAL VAPOR DEPOSITION; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS;

BOUNDARY DIFFUSION; DIFFUSION ACTIVITY ENERGY; ELECTROLESSPLATING; INTERCONNECTION MATERIALS;

THIN FILMS;

EID: 34249103556     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.107     Document Type: Article

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