Thickness-independent transport channels in topological insulator Bi 2Se 3 thin films

Physical Review Letters

Volumn 109, Issue 11, 2012, Pages

  Bansal, Namrata ^a   Kim, Yong Seung ^a,b   Brahlek, Matthew ^a   Edrey, Eliav ^a   Oh, Seongshik ^a  

^a RUTGERS UNIVERSITY   (United States)

^b Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY; QUANTUM OSCILLATIONS; SAMPLE THICKNESS; SHEET CARRIER DENSITIES; SURFACE ACCUMULATION; SURFACE CHANNEL; TOPOLOGICAL INSULATORS; TRANSPORT CHANNEL; TWO CHANNEL; WEAK ANTILOCALIZATION;

ELECTRIC INSULATORS; THIN FILMS; TRANSPORT PROPERTIES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84866338461     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.116804     Document Type: Article

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