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Volumn 109, Issue 10, 2011, Pages

Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

(10) He, Liang a Xiu, Faxian a Wang, Yong a,b Fedorov, Alexei V c Huang, Guan a Kou, Xufeng a Lang, Murong a Beyermann, Ward P d Zou, Jin b Wang, Kang L a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF QUEENSLAND (Australia)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

d UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CRITICAL TEMPERATURES; CRYSTALLINE QUALITY; IMPURITY BANDS; MAGNETO-TRANSPORT MEASUREMENT; SI (1 1 1); SI(111) SUBSTRATE; SURFACE STATE;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SELENIUM COMPOUNDS; THICK FILMS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958856640 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3585673 Document Type: Conference Paper

Times cited : (141)

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