Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction

Review of Scientific Instruments

Volumn 82, Issue 3, 2011, Pages

  Klein, C ^a   Nabbefeld, T ^a,c   Hattab, H ^a   Meyer, D ^a   Jnawali, G ^a   Kammler, M ^a   Meyer Zu Heringdorf, F J ^a   Golla Franz, A ^b,d   Muller B H ^b,e   Schmidt, Th ^b,f   Henzler, M ^b   Horn Von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Masterflex Brennstoffzellentechnik GmbH   (Germany)

^d Anke Golla Patentanwalt   (Germany)

^e Proxitronic Detector Systems GmbH   (Germany)

^f UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE OF INCIDENCE; ANGLES OF INCIDENCE; BRAGG CONDITIONS; ELECTRON ENERGIES; HOMOEPITAXIAL GROWTH; LAYER-BY-LAYER GROWTH; LEED PATTERNS; RECIPROCAL SPACE; ROUGH SURFACES; SPOT PROFILE ANALYSIS;

LOW ENERGY ELECTRON DIFFRACTION;

DIFFRACTION;

EID: 79953656953     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3554305     Document Type: Article

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55. 60(111) grows without lattice mismatch on Bi(111). The growth of an epitaxial Bi(111) film on Si(001) is easier than the preparation of a Bi(111) single crystal.
56. The RSM has been generated from a series of spot profiles by the program Whering32 which is available on www.spaleed.de