Improvement in performance of hydrogenated amorphous silicon solar cells with hydrogenated intrinsic amorphous silicon oxide p/i buffer layers

Solar Energy Materials and Solar Cells

Volumn 128, Issue , 2014, Pages 394-398

  Fang, Jia ^a   Chen, Ze ^a   Wang, Ning ^a   Bai, Lisha ^a   Hou, Guofu ^a   Chen, Xinliang ^a   Wei, Changchun ^a   Wang, Guangcai ^a   Sun, Jian ^a   Zhao, Ying ^a   Zhang, Xiaodan ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Buffer layer; Hydrogenated amorphous silicon; Hydrogenated amorphous silicon oxide; p i Interface; Solar cell

Indexed keywords

ACTIVATION ENERGY; BUFFER LAYERS; CHARGE CARRIERS; ELECTRIC FIELDS; ENERGY GAP; HYDROGENATION; MICROCRYSTALS; OPEN CIRCUIT VOLTAGE; SILICON COMPOUNDS; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS;

A-SI:H SOLAR CELLS; BUILT-IN ELECTRIC FIELDS; CARRIER RECOMBINATION; DEVICE PERFORMANCE; EXTERNAL QUANTUM EFFICIENCY; HYDROGENATED AMORPHOUS SILICON (A-SI:H); SINGLE JUNCTION; TANDEM SOLAR CELLS;

AMORPHOUS SILICON;

EID: 84903574719     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.012     Document Type: Article

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