Origin of the V oc enhancement with a p-doped nc-SiOx:H window layer in n-i-p solar cells

Journal of Non-Crystalline Solids

Volumn 358, Issue 17, 2012, Pages 1958-1961

  Biron, Rémi ^a   Pahud, Céline ^a   Haug, Franz Josef ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

Author keywords

Built in voltage; Off stoichiometric silicon oxide; Open circuit voltage; Thin film silicon solar cell

Indexed keywords

A-SI:H; BUILT-IN VOLTAGE; CONDUCTION BAND OFFSET; OXYGEN CONTENT; P-LAYER; SINGLE JUNCTION; THIN-FILM SILICON SOLAR CELLS; WINDOW LAYER;

NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; SILICON; SILICON OXIDES;

SILICON SOLAR CELLS;

EID: 84865729999     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.01.058     Document Type: Conference Paper

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