Numerical simulation on the influence of via and rear emitters in MWT solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 4, 2014, Pages 1032-1039

  Magnone, Paolo ^a   De Rose, Raffaele ^a   Tonini, Diego ^b   Frei, Michel ^c   Zanuccoli, Mauro ^a   Belli, Andrea ^a   Galiazzo, Marco ^b   Sangiorgi, Enrico ^a   Fiegna, Claudio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b Applied Materials Italia Srl ^*  (Italy)

^c APPLIED MATERIALS INC   (United States)

Author keywords

Back contact; metal wrap through (MWT); photovoltaics; Schottky; simulation; solar cell; via

Indexed keywords

COMPUTER SIMULATION; NUMERICAL MODELS; SOLAR CELLS;

BACK-CONTACT; PHOTOVOLTAICS; SCHOTTKY; SIMULATION; VIA;

SILICON SOLAR CELLS;

EID: 84903316930     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2317945     Document Type: Article

References (29)

1. B. Thaidigsmann, M. Linse, A. Wolf, F. Clement, D. Biro, and R. Preu, "The path to industrial production of highly efficient metal wrap through silicon solar cells," GREEN, vol. 2, no. 4, pp. 171-176, 2013.
2. W. Yin, X. Wang, F. Zhang, and L. Zhang, "19.6% cast mono-MWT solar cells and 268 W modules," IEEE J. Photovoltaics, vol. 3, no. 2, pp. 697-701, Apr. 2013.
3. F. Clement, M. Menkoe, R. Hoenig, J. Haunschild, D. Biro, R. Preu, D. Lahmer, J. Lossen, and H.-J. Krokoszinski, "Pilot-line processing of screen-printed Cz-Si MWT solar cells exceeding 17% efficiency," pre sented at the IEEE 34th Photovoltaic Spec. Conf., Philadelphia, PA, USA, 2009.
4. T. Fellmeth, K. Meyer, J. Greulich, F. Clement, D. Biro, R. Preu, M. Menkoe, D. Lahmer, and H.-J. Krokoszinski, "Development and modelling of crystalline silicon based metal wrap through (MWT) solar cells," presented at the 25th Eur. Photovoltaic Sol. Energy Conf. Exhib., Valencia, Spain, 2010.
5. B. Thaidigsmann, A. Drews, T. Fellmeth, P. Saint-Cast, A. Wolf, F. Clement, R. Preu, and D. Biro, "Synergistic effects of rear-surface passivation and the metal wrap through concept," IEEE J. Photovoltaics, vol. 2, no. 2, pp. 109-113, Apr. 2012.
6. F. Clement, B. Thaidigsmann, R. Hoenig, T. Fellmeth, A. Spribille, E. Lohmüller, A. Krieg, M. Glatthaar, H. Wirth, D. Biro, R. Preu, M. Menkoe, K. Meyer, D. Lahmer, H.-J. Krokoszinski, M. Neidert, A. Henning, C. Mohr, and W. Zhang, "Pilot-line processing of highly-efficient MWT silicon solar cells," presented at the 25th Eur. Photovoltaic Sol. Energy Conf. Exhib., Valencia, Spain, 2010.
7. P. Magnone, D. Tonini, R. De Rose, M. Frei, F. Crupi, E. Sangiorgi, and C. Fiegna, "Numerical simulation and modeling of resistive and recombination losses in MWT solar cells," IEEE J. Photovoltaics, vol. 3, no. 4, pp. 1215-1221, Oct. 2013.
8. C. Ulzhofer, P. P. Altermatt, N.-P. Harder, and R. Brendel, "Loss analysis of emitter-wrap-through silicon solar cells by means of experiment and three-dimensional device modeling," J. Appl. Phys., vol. 107, no. 10, pp. 104509-1-104509-12, 2010.
9. A. Spribille, E. Lohmüller, B. Thaidigsmann, R. Hamid, H. Nussbaumer, F. Clement, and R. Preu, "Wet chemical single-side emitter etch back for MWT solar cells with Al-BSF and challenges for via paste selection," presented at the 28th Eur. Photovoltaic Sol. Energy Conf. Exhib., Paris, France, 2013.
10. A. Spribille, J. Greulich, E. Lohmüller, F. Clement, J. Specht, D. Biro, R. Preu, O. Doll, C. Tüshaus, W Stockum, and I. Köhler, "MWT solar cell processing by use of isishape® SolarEtch® SiD for rear contact and edge isolation," presented at the 27th Eur. Photovoltaic Sol. Energy Conf. Exhib., Frankfurt, Germany, 2012.
11. D. K. Schroder and D. L. Meier, "Solar cell contact resistance-A review," IEEE Trans. Electron Devices, vol. ED-31, no. 5, pp. 637-647, May 1984.
12. J. D. van Otterloo, "Some Schottky barriers on clean-cleaved silicon" Ph.D. dissertation, Techn. Hogeschool Delft, Delft, The Netherlands, 1977.
13. J. Rentsch, L. Gautero, A. Lemke, S. Eigner, M. Zimmer, F. Walter, M. Hofmann, R. Preu, "Single side etching-Key technology for industrial high efficiency processing," presented at the 23rd Eur. Photovoltaic Solar Energy Conf., Valencia, Spain, 2008.
14. H. B. Serreze, "Optimizing solar cell performance by simultaneous consideration of grid pattern design and interconnect configuration," presented at the IEEE 13th Photovoltaic Spec. Conf., Washington, DC, USA, 1978.
15. R. De Rose, M. Zanuccoli, P. Magnone, M. Frei, E. Sangiorgi, and C. Fiegna, "Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation," IEEE J. Photovoltaics, vol. 3, no. 1, pp. 159-167, Jan. 2013.
16. R. De Rose, P. Magnone, M. Zanuccoli, E. Sangiorgi, C. Fiegna. "Loss analysis of silicon solar cells by means of numerical device simulation," presented at the 14th Int. Conf. Ultimate Integr. Silicon, Warwick U.K., 2013.
17. Sentaurus Device User Guide, Ver. C-2009.06, Synopsis, Mountain View, CA, USA, 2009.
18. M. Zanuccoli, R. De Rose, P. Magnone, E. Sangiorgi, and C. Fiegna, "Performance analysis of rear point contact solar cells by three-dimensional numerical simulation," IEEE Trans. Electron Devices, vol. 59, no. 5, pp. 1311-1319, May 2012.
19. P. Magnone, R. De Rose, M. Zanuccoli, D. Tonini, M. Galiazzo, G. Cellere, H.-W. Guo, M. Frei, E. Sangiorgi, and C. Fiegna, "Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations," presented at the 37th IEEE Photovoltaic Spec. Conf., Seattle, WA, USA, 2011.
20. A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," J. Appl. Phys., vol. 84, no. 7, pp. 3684-3695, 1998. (Pubitemid 128600505)
21. P. Altermatt, "Models for numerical device simulations of crystalline silicon solar cells-A review," J. Comput. Electron., vol. 10, no. 3, pp. 314-330, 2011.
22. D. Klaassen, "A unified mobility model for device simulation: I. Model equations and concentration dependence," Solid-State Electron., vol. 35, no. 7, pp. 953-959, 1992. (Pubitemid 23567459)
23. D. Klaassen, "A unified mobility model for device simulation: II. Temperature dependence of carrier mobility and lifetime," Solid-State Electron., vol. 35, no. 7, pp. 961-967, 1992. (Pubitemid 23567458)
24. S. Glunz, S. Rein, J. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon," J. Appl. Phys., vol. 90, no. 5, pp. 2397-2404, 2001. (Pubitemid 33600658)
25. P. Altermatt, S. Steingrube, Y. Yang, C. Sprodowski, T. Dezhdar, S. Koc, B. Veith, S. Herrman, R. Bock, K. Bothe, J. Schmidt, R. Brendel, "Highly predictive modelling of entire Si solar cells for industrial applications," presented at the 24th Eur. Photovoltaic Sol. Energy Conf. Exhib., Hamburg, Germany, 2009.
26. A. Kimmerle, A. Wolf, U. Belledin, and D. Biro, "Modelling carrier recombination in highly phosphorus-doped industrial emitters," in Proc. SiliconPV Conf., Energy Procedia, 2011, vol. 8, pp. 275-281.
27. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. New York, NY, USA: Wiley, 2007.
28. A. G. Aberle, Crystalline Silicon Solar Cells: Advanced Surface Passivation and Analysis. Sydney, Australia: Cent. Photovoltaic Eng., Univ. New South Wales, 2004.
29. M. W. P. E. Lamers, C. Tjengdrawira, M. Koppes, I. J. Bennett, E. E. Bende, T. P. Visser, E. Kossen, B. Brockholz, A. A. Mewe, I. G. Romijn, E. Sauar, L. Carnel, S. Julsrud, T. Naas, P. C. de Jong, and A. W. Weeber, "17.9% metal-wrap-through mc-Si cells resulting in module efficiency of 17.0%," Progress Photovoltaics, vol. 20, no. 1, pp. 62-73, 2012.