Loss analysis of silicon solar cells by means of numerical device simulation

ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Volumn , Issue , 2013, Pages 205-208

  De Rose, R ^a   Magnone, P ^a   Zanuccoli, M ^a   Sangiorgi, E ^a   Fiegna, C ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE ANALYSIS; DARK CURRENT-VOLTAGE; LOSS MECHANISMS; NUMERICAL DEVICE SIMULATION; PARASITIC RESISTIVE; RECOMBINATION LOSS; RECOMBINATION MECHANISMS; SELECTIVE EMITTERS;

SILICON;

SILICON SOLAR CELLS;

EID: 84880308085     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2013.6523520     Document Type: Conference Paper

References (7)

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3. P. 1. Verlinden et aI., "Simple power-loss analysis method for high-efficiency Interdigitated Back Contact (IBC) silicon solar cells," Solar Energy Materials & Solar Cells, vol. 106, pp. 37-41, 2012.
4. R. De Rose et aI., "Understanding the Impact of the Doping Profiles on Selective Emitter Solar Cell by Two-Dimens10nal Numerical Simulat10n," IEEE Journal of Photovoltaics, vol. 3, no. 1,2013, pp. 159-167.
5. Sentaurus Device User Guide, Synopsys, Mountain View, CA.
6. P. Magnone et aI., "Understanding the Impact of Double ScreenPrinting on Silicon Solar Cells by 2-D Numerical Simulat10ns," Proc. of 37'h1EEE PVSC, 2011, pp. 2177-2180.
7. M. Zanuccoli et aI., "Performance Analysis of Rear Point Contact Solar Cells by Three-Dimens10nal Simulat10n ", IEEE Transact10n on Electron Devices, vol. 59, no. 5, pp. 1311-1319,2012