Influence of deposition temperature on the structure of 3,4,9,10-perylene tetracarboxylic dianhydride thin films on H-passivated silicon probed by Raman spectroscopy

Organic Electronics

Volumn 1, Issue 1, 2000, Pages 49-56

  Salvan, G ^a   Tenne, D A ^a,b   Das, A ^c   Kampen, T U ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

3,4,9,10 Perylene tetracarboxylic dianhydride; Raman spectroscopy; Silicon; Vibrations; X ray diffraction

Indexed keywords

EID: 0346484262     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1566-1199(00)00008-2     Document Type: Article

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