Thin PTCDA films on Si(001): 1. Growth mode

Surface Science

Volumn 572, Issue 1, 2004, Pages 23-31

  Gustafsson, J B ^a   Moons, E ^a   Widstrand, S M ^a   Johansson, L S O ^a  

^a KARLSTAD UNIVERSITY   (Sweden)

Author keywords

Atomic force microscopy; Growth; Low energy electron diffraction (LEED); Molecular beam epitaxy; Near edge extended X ray absorption fine structure (NEXAFS); Silicon; X ray photoelectron spectroscopy

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; ATTENUATION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLECULAR ORBITALS; NEAR EDGE EXTENDED X RAY ABSORPTION FINE STRUCTURE (NEXAFS); ORGANIC MOLECULAR; STRANSKI-KRASTANOV GROWTH;

SILICON;

EID: 7544247941     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.08.031     Document Type: Article

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