Germanane: A low effective mass and high bandgap 2-D channel material for future FETs

IEEE Transactions on Electron Devices

Volumn 61, Issue 7, 2014, Pages 2309-2315

  Ghosh, Ram Krishna ^a,b   Brahma, Madhuchhanda ^b   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

2 D crystal; ab initio simulation; effective mass; MOSFET; real and complex band structure; tunnel field effect transistor (TFET)

Indexed keywords

BOATS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; MORPHOLOGY; VAN DER WAALS FORCES;

2-D CRYSTALS; AB INITIO SIMULATIONS; COMPLEX BAND STRUCTURES; EFFECTIVE MASS; MOS-FET; TUNNEL FIELD-EFFECT TRANSISTORS (TFET);

ENERGY GAP;

EID: 84903202598     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2325136     Document Type: Article

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