SCOPUS 정보 검색 플랫폼

Volumn 612, Issue , 2014, Pages 265-272

Effect of annealing of graphene layer on electrical transport and degradation of Au/graphene/n-type silicon Schottky diodes

(10) Kim, Dong Joo a Kim, Gil Sung a Park, No Won b Lee, Won Yong b Sim, Yumin b Kim, Keun Soo c Seong, Maeng Je b Koh, Jung Hyuk b Hong, Chang Hee a Lee, Sang Kwon b

a Chonbuk National University (South Korea)

b Chung Ang University (South Korea)

c Sejong University (South Korea)

Author keywords

Annealing effect; Electrical degradation; Graphene; Schottky junction diode

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; GRAPHENE; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON; SUBSTRATES;

ANNEALING EFFECTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRIC DEGRADATION; ELECTRICAL DEGRADATION; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS;

ELECTRIC PROPERTIES;

EID: 84903147207 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2014.05.147 Document Type: Article

Times cited : (20)

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