Hydrogen-doping stabilized metallic VO2 (R) thin films and their application to suppress Fabry-Perot resonances in the terahertz regime

Applied Physics Letters

Volumn 104, Issue 24, 2014, Pages

  Zhao, Yong ^a   Karaoglan Bebek, Gulten ^a   Pan, Xuan ^a   Holtz, Mark ^b   Bernussi, Ayrton A ^a   Fan, Zhaoyang ^a  

^a TEXAS TECH UNIVERSITY   (United States)

^b TEXAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRY-PEROT INTERFEROMETERS; HYDROGEN; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; OPTICAL PROPERTIES; OXIDE MINERALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM DIOXIDE; VANADIUM DIOXIDE; X RAY DIFFRACTION ANALYSIS;

CHAIN SEPARATION; CRITICAL CONDITION; ELECTRICAL AND OPTICAL PROPERTIES; FABRY-PEROT RESONANCES; HIGH RESOLUTION X RAY DIFFRACTION; HYDROGEN DOPING; HYDROGEN SPILL OVERS; LOW TEMPERATURES;

THIN FILMS;

EID: 84903124857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4884077     Document Type: Article

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