SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 7, 2014, Pages 2329-2338

Operation of lightly doped Si microwires under high-level injection conditions

(6) Santori, Elizabeth A d Strandwitz, Nicholas C d Grimm, Ronald L d Brunschwig, Bruce S a Atwater, Harry A b,c Lewis, Nathan S a,c,d

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

b California Institute of Technology (United States)

c CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

d California Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; EFFICIENCY; QUANTUM YIELD; REDOX REACTIONS; SILICON;

CARRIER COLLECTION; CARRIER COLLECTION EFFICIENCIES; CURRENT-POTENTIAL; DEVICE PERFORMANCE; HIGH-LEVEL INJECTIONS; NON-AQUEOUS ELECTROLYTES; RADIAL STRUCTURE; STRONG INVERSION;

WIRE;

ELECTRODE; ENERGY EFFICIENCY; PHOTOVOLTAIC SYSTEM; QUANTUM MECHANICS; SILICON; SIMULATION; SUBSTRATE;

EID: 84902979774 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c4ee00202d Document Type: Article

Times cited : (7)

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