Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

Applied Physics Letters

Volumn 102, Issue 10, 2013, Pages

  Wang, X L ^a   Luan, C Y ^a   Shao, Q ^a   Pruna, A ^a   Leung, C W ^b   Lortz, R ^c   Zapien, J A ^a   Ruotolo, A ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE MAGNETIC SEMICONDUCTORS; FREE CHARGE CARRIERS; LOCALIZED MAGNETIC MOMENTS; MN CONCENTRATIONS; MN-DOPED ZNO THIN FILMS; NEAR BAND EDGE EMISSIONS; NON-MONOTONIC DEPENDENCE; WIDE-BAND-GAP SEMICONDUCTOR;

CHARGE CARRIERS; EXCHANGE INTERACTIONS; MAGNETIC MOMENTS; MANGANESE; MANGANESE OXIDE; METALLIC FILMS; OPTICAL PROPERTIES; ZINC OXIDE;

ENERGY GAP;

EID: 84875132823     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795797     Document Type: Article

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