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Volumn 25, Issue 25, 2014, Pages

Graphene-quantum-dot nonvolatile charge-trap flash memories

(6) Sin Joo, Soong a Kim, Jungkil a Seok Kang, Soo a Kim, Sung a Choi, Suk Ho a Won Hwang, Sung b

a Kyung Hee University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

Grapheme; Memory; Quantum dot

Indexed keywords

DATA STORAGE EQUIPMENT; FLASH MEMORY; GRAPHENE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE-VOLTAGE CURVE; COMBINED EFFECT; DATA-RETENTION; GRAPHEME; ION-BEAM SPUTTERING; PROGRAM AND ERASE; QUANTUM DOT; SEQUENTIAL PROCESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84901989975 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/25/25/255203 Document Type: Article

Times cited : (38)

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