Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 742-746

  Lu, Tseng Fu ^a   Wang, Jer Chyi ^a   Yang, Chia Ming ^b   Chang, Chung Po ^a   Ho, Kuan I ^a   Ai, Chi Fong ^c   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b Inotera Memories   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT EFFECTS; ELECTROLYTE-INSULATOR-SEMICONDUCTOR; HYDROGEN IONS; HYSTERESIS PHENOMENON; NONIDEAL EFFECTS; OPTIMUM CONDITIONS; PH DETECTION; PH-SENSITIVITY; PLASMA TREATMENT; SENSING CHARACTERISTICS;

ELECTROLYTES; HAFNIUM; HAFNIUM OXIDES; ION SELECTIVE MEMBRANES; IONS; OXIDE FILMS; PH SENSORS; PLASMA APPLICATIONS; PLASMAS; SENSORS; THIN FILMS;

PH EFFECTS;

EID: 77953129808     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.029     Document Type: Article

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