Development of engineered sensing membranes for field-effect ion-sensitive devices based on stacked high-κ dielectric layers

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 973-975

  Jang, Hyun June ^a   Kim, Min Soo ^a   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Electrolyteinsulatorsemiconductor (EIS); engineered sensing membranes; ion sensitive field effect transistor (ISFET); SiO2 HfO2 Al2O3

Indexed keywords

DEVICE APPLICATION; DIELECTRIC LAYER; DRIFT RATES; ELECTROLYTEINSULATORSEMICONDUCTOR (EIS); FIELD-EFFECT; HIGH SENSITIVITY; HYSTERESIS VOLTAGE; LONG TERM STABILITY; PH SENSITIVITY; SENSING MEMBRANES; SENSOR APPLICATIONS; SIO2/HFO2/AL2O3; STACKED LAYER;

FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; IONS; PH EFFECTS; PH SENSORS; SILICON COMPOUNDS;

MEMBRANES;

EID: 79959810832     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2139192     Document Type: Article

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