SCOPUS 정보 검색 플랫폼

AIP Advances

Volumn 4, Issue 5, 2014, Pages

Electrical properties of BaTiO3 based - MFIS heterostructure: Role of semiconductor channel carrier concentration

(6) Vagadia, Megha a Ravalia, Ashish a Solanki, P S a Pandey, Parul b Asokan, K c Kuberkar, D G a

a SAURASHTRA UNIVERSITY (India)

b INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH BHOPAL (India)

c INTER UNIVERSITY ACCELERATOR CENTRE (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FERROELECTRICITY; ZINC OXIDE;

APPLIED VOLTAGES; FERROELECTRIC POLARIZATION; LOW-LEAKAGE CURRENT; MEMORY APPLICATIONS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; RETENTION BEHAVIOR; SEMICONDUCTOR CHANNELS; ZNO SEMICONDUCTORS;

HETEROJUNCTIONS;

EID: 84901649757 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4880496 Document Type: Article

Times cited : (25)

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