Modulation effect of lead zirconate titanate for zinc oxide channel resistance in ferroelectric field effect transistor

Ferroelectrics

Volumn 421, Issue 1, 2011, Pages 92-97

  Jia, Ze ^a   Zhang, Ming Ming ^a   Ren, Tian Ling ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Channel resistance; FeFET; Modulation effect; ZnO

Indexed keywords

AL-DOPED ZNO; ALUMINUM-DOPED ZINC OXIDE; CHANNEL RESISTANCE; FEFET; FERROELECTRIC FIELD EFFECT TRANSISTORS; LEAD ZIRCONATE TITANATE; MODULATION EFFECT; MODULATION EFFECTS; PZT; REMNANT POLARIZATIONS; STACKED STRUCTURE; ZNO;

FERROELECTRICITY; GATE DIELECTRICS; GATES (TRANSISTOR); LEAD OXIDE; MODULATION; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 81355149311     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2011.594734     Document Type: Conference Paper

References (6)

1. H. Shiga, D. Takashima, and S. Shiratake, A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes. IEEE J. Solid-State Circuits. 45, 142-152 (2010).
2. S. Sakai and R. Ilangovan, Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance. IEEE Elec. Dev. Lett. 25, 369-371 (2004).
3. T. Li, S. Hsu, B. Ulrich, L. Stecker, and D. Evans, One transistor ferroelectric memory devices with improved retention characteristics. Jpn. J. Appl. Phys. 41, 6890-6894 (2002). (Pubitemid 43225471)
4. Y. Kato, Y. Kaneko, H. Tanaka, and Y. Shimada, Nonvolatile memory using epitaxially grown composite-oxide-film technology. Jpn. J. Appl. Phys. 47, 2719-2724 (2002).
5. R. Hoffman, B. Norris, and J. Wager, ZnO-based transparent thin-film transistors. Appl. Phys. Lett. 82, 773-775 (2003).
6. X. Jiang, F. Wong, M. Fung, and S. Lee, Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices. Appl. Phys. Lett. 83, 1875-1877 (2003).