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Journal of Materials Chemistry C

Volumn 2, Issue 23, 2014, Pages 4515-4520

Enhanced field emission of p-type 3C-SiC nanowires with B dopants and sharp corners

(8) Yang, Yang a,b Yang, Hao b Wei, Guodong b Wang, Lin b Shang, Minghui b Yang, Zuobao b Tang, Bin a Yang, Weiyou b

a TAIYUAN UNIVERSITY OF TECHNOLOGY (China)

b NINGBO UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION; PRISMS; SILICON CARBIDE;

CURRENT EMISSIONS; EFFECTIVE WORK FUNCTION; ELECTRON EMITTERS; ENHANCED FIELD EMISSION; FIELD EMISSION PROPERTY; HIGH TEMPERATURE; POLYMERIC PRECURSORS; SHARP CORNERS;

NANOWIRES;

EID: 84901357417 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c4tc00524d Document Type: Article

Times cited : (39)

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