SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 24, Issue 6, 2013, Pages

Stable field emission from nanoporous silicon carbide

(3) Kang, Myung Gyu a,b Lezec, Henri J a Sharifi, Fred a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b UNIVERSITY OF MARYLAND (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PROPERTIES; EMITTER ARRAYS; LIFETIME MEASUREMENTS; MACROSCOPIC SHAPES; MICROWAVE ELECTRONICS; MONOLITHIC STRUCTURES; NANO-POROUS SILICON; NANOSCALE MORPHOLOGY; NEW MODALITY; POROUS STRUCTURES; ROOM-TEMPERATURE PROCESS; SILICON CARBIDE WAFERS; STABLE EMISSIONS; STABLE FIELDS; THERMAL ELECTRON; THERMAL SOURCE; X-RAY SOURCES;

ELECTRON SOURCES; THERMIONIC EMISSION;

SILICON CARBIDE;

INORGANIC COMPOUND; NANOMATERIAL; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; DIAGNOSTIC IMAGING; ELECTRON; ELECTRONICS; METHODOLOGY; NANOTECHNOLOGY; POROSITY; ULTRASTRUCTURE;

CARBON COMPOUNDS, INORGANIC; DIAGNOSTIC IMAGING; ELECTRONICS; ELECTRONS; NANOSTRUCTURES; NANOTECHNOLOGY; POROSITY; SILICON COMPOUNDS;

MLCS; MLOWN;

EID: 84872978398 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/24/6/065201 Document Type: Article

Times cited : (50)

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