On the electrostatic discharge robustness of graphene

IEEE Transactions on Electron Devices

Volumn 61, Issue 6, 2014, Pages 1920-1928

  Li, Hong ^a,b   Russ, Christian C ^c   Liu, Wei ^a   Johnsson, David ^c   Gossner, Harald ^c   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Current density; current saturation; electrostatic discharge (ESD); graphene; It2; transmission line pulsing (TLP)

Indexed keywords

CURRENT DENSITY; DESIGN; ELECTROSTATIC DISCHARGE; GRAPHENE;

CURRENT SATURATION; EQUIVALENT CURRENT DENSITY; INTRINSIC BREAKDOWN; IT2; NOVEL APPLICATIONS; SEMICONDUCTOR PRODUCTS; TRANSMISSION LINE PULSING; TRANSPARENT ELECTRODE;

ELECTROSTATIC DEVICES;

EID: 84901307490     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2315235     Document Type: Article

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