Enhanced electron mobility due to dopant-defect pairing in conductive ZnMgO

Advanced Functional Materials

Volumn 24, Issue 19, 2014, Pages 2875-2882

  Ke, Yi ^a,b   Lany, Stephan ^a   Berry, Joseph J ^a   Perkins, John D ^a   Parilla, Philip A ^a   Zakutayev, Andriy ^a   Ohno, Tim ^b   O'Hayre, Ryan ^b   Ginley, David S ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Metallurgical and Materials Engineering   (United States)

Author keywords

band gap engineering; defect pairing; ionized impurity scattering; non equilibrium thin film; transparent conducting oxides

Indexed keywords

CALCULATIONS; DEPOSITION; ENERGY GAP; GALLIUM; IONIZATION; PULSED LASER DEPOSITION; SCATTERING; SEMICONDUCTOR DOPING; ZINC;

BAND GAP ENGINEERING; DEFECT-PAIRING; IONIZED IMPURITY SCATTERING; NON EQUILIBRIUM; TRANSPARENT CONDUCTING OXIDE;

DEFECTS;

EID: 84900859024     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201303204     Document Type: Article

References (57)

1. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, Y. Segawa, Appl. Phys. Lett. 1998, 72, 2466.
2. K. Matsubara, H. Tampo, H. Shibata, A. Yamada, P. Fons, K. Iwata, S. Niki, Appl. Phys. Lett. 2004, 85, 1374.
3. D. Cohen, K. Ruthe, S. Barnett, J. Appl. Phys. 2004.
4. W. Wei, C. Jin, J. Narayan, R. J. Narayan, J. Appl. Phys. 2010, 107, 013510.
5. W. Yang, R. Vispute, S. Choopun, R. Sharma, T. Venkatesan, H. Shen, Appl. Phys. Lett. 2001, 78, 2787.
6. D. Cohen, S. Barnett, J. Appl. Phys. 2005, 98, 053705.
7. M. Brandt, H. Von Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, M. Grundmann, Semicond. Sci. Technol. 2010, 26, 014040.
8. T. Minemoto, T. Minemoto, Y. Hashimoto, Y. Hashimoto, T. Satoh, T. Satoh, T. Negami, T. Negami, H. Takakura, H. Takakura, Y. Hamakawa, Y. Hamakawa, J. Appl. Phys. 2001, 89, 8327.
9. X. Li, A. Kanevce, J. V. Li, I. Repins, Phys. Status Solidi C 2010, 7, 1703.
10. D. Olson, S. Shaheen, M. White, W. Mitchell, M. van Hest, R. Collins, D. Ginley, Adv. Funct. Mater. 2006, 17, 264.
11. K. Knutsen, R. Schifano, E. Marstein, Phys. Status Solidi A 2012.
12. T. Gershon, K. Musselman, A. Marin, R. Friend, J. MacManus-Driscoll, Sol. Energy Mater. Sol. Cells 2012, 96, 148.
13. K. Koike, K. Hama, I. Nakashima, S. Sasa, M. Inoue, M. Yano, Jpn. J. Appl. Phys. 2005, 44, 3822.
14. Y. Ke, J. J. Berry, P. Parilla, A. Zakutayev, R. P. O'hayre, D. Ginley, Thin Solid Films 2012, 520, 3697.
15. X. Gu, L. Zhu, Z. Ye, Q. Ma, H. He, Y. Zhang, B. Zhao, Sol. Energy Mater. Sol. Cells 2008, 92, 343.
16. K. Maejima, H. Shibata, H. Tampo, K. Matsubara, S. Niki, Thin Solid Films 2010, 518, 2949.
17. H. Agura, A. Suzuki, T. Matsushita, T. Aoki, M. Okuda, Thin Solid Films 2003, 445, 263.
18. T. Minami, Semicond. Sci. Technol. 2005, 20, S35.
19. D. C. Look, T. C. Droubay, S. A. Chambers, Appl. Phys. Lett. 2012, 101, 102101.
20. J. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Appl. Phys. Lett. 2006, 89, 262107/1.
21. K. Fleischer, E. Arca, C. Smith, I. Shvets, Appl. Phys. Lett. 2012, 101, 121918.
22. Q. Ma, H. He, Z. Ye, L. Zhu, J. Huang, Y. Zhang, B. Zhao, J. Solid State Chem. 2008, 181, 525.
23. A. Bikowski, K. Ellmer, J. Appl. Phys. 2013, 114, 063709.
24. A. Janotti, C. G. Van de Walle, Phys. Rev. B 2007, 76, 165202.
25. S. Lany, A. Zunger, Phys. Rev. Lett. 2007, 98, 045501.
26. D. Demchenko, B. Earles, H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç, Phys. Rev. B 2011, 84, 075201.
27. F. Tuomisto, V. Ranki, K. Saarinen, D. C. Look, Phys. Rev. Lett. 2003, 91, 205502.
28. D. C. Look, K. Leedy, L. Vines, B. Svensson, A. Zubiaga, F. Tuomisto, D. Doutt, L. Brillson, Phys. Rev. B 2011, 84, 115202.
29. J. T-Thienprasert, S. Rujirawat, W. Klysubun, J. Duenow, T. Coutts, S. Zhang, D. C. Look, S. Limpijumnong, Phys. Rev. Lett. 2013, 110, 055502.
30. S. Lany, A. Zunger, Phys. Rev. B 2008, 78, 235104.
31. C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, M. Schubert, J. Appl. Phys. 2006, 99, 113504.
32. L. Hedin, Phys. Rev. 1965, 139, A796.
33. M. Shishkin, M. Marsman, G. Kresse, Phys. Rev. Lett. 2007, 99, 246403.
34. S. Lany, H. Raebiger, A. Zunger, Phys. Rev. B 2008, 77, 241201.
35. A. Schleife, C. Rödl, J. Furthmüller, F. Bechstedt, New J. Phys. 2011, 13, 085012.
36. K. Ellmer, in Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Vol. 104 (Eds:, K. Ellmer, A. Klein, B. Rech,), Springer-Verlag, Berlin Heidelberg 2008, 35.
37. N. Chen, C. Sui, Mater. Sci. Eng., B 2006, 126, 16.
38. R. L. Weiher, Phys. Rev. 1966, 152, 736.
39. N. Ashkenov, B. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, J. Appl. Phys. 2003, 93, 126.
40. S. T. Pantelides, Rev. Modern Phys. 1978, 50, 797.
41. B. K. Meyer, J. Sann, D. M. Hofmann, C. Neumann, A. Zeuner, Semicond. Sci. Technol. 2005, 20, S62.
42. H. Peng, D. O. Scanlon, V. Stevanovic, J. Vidal, G. W. Watson, S. Lany, Phys. Rev. B 2013, 88, 115201.
43. A. Zakutayev, N. H. Perry, T. O. Mason, D. S. Ginley, S. Lany, Appl. Phys. Lett. 2013, 103, 232106.
44. L. Makowski, M. Glicksman, J. Phys. Chem. Solids 1973, 34, 487.
45. F. A. Kröger, The Chemistry of Imperfect Crystals North-Holland, Amsterdam 1974.
46. D. Wegner, E. A. Meyer, J. Phys.: Condens. Matter 1989, 1, 5403.
47. S. Lany, V. Ostheimer, H. Wolf, T. Wichert, Phys. B 2001, 958, 308.
48. G.-Y. Huang, C.-Y. Wang, J.-T. Wang, J. Appl. Phys. 2009, 105, 073504.
49. P. Erhart, K. Albe, Appl. Phys. Lett. 2006, 88, 201918.
50. K. Ellmer, A. Klein, B. Rech, Springer Series Mater. Sci. 2007, 104, 1.
51. H. Liu, V. Avrutin, N. Izyumskaya, U. Özgür, A. B. Yankovich, J. Appl. Phys. 2012, 111, 103713.
52. G. Kresse, D. Joubert, Phys. Rev. B 1999, 59, 1758.
53. P. E. Blöchl, Phys. Rev. B 1994, 50, 17953.
54. J. P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 1996, 77, 3865.
55. S. Lany, P. Graf, M. d'Avezac, A. Zunger, B. Am. Phys. Soc. 2011, H18, 10.
56. S. Lany, A. Zunger, Model. Simul. Sci. Eng. 2009, 17, 084002.
57. M. Gajdoš, K. Hummer, G. Kresse, J. Furthmüller, F. Bechstedt, Phys. Rev. B 2006, 73, 045112.