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Volumn 520, Issue 9, 2012, Pages 3697-3702

The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga

(6) Ke, Yi a,b Berry, Joseph a Parilla, Philip a Zakutayev, Andriy a O'Hayre, Ryan b Ginley, David a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b Department of Metallurgical and Materials Engineering (United States)

Author keywords

Crystal quality; Electrical property; Epitaxy; Ga dopant; Polycrystalline; Pulse laser deposition; X ray diffraction; Zinc magnesium oxide

Indexed keywords

CRYSTAL QUALITIES; ELECTRICAL PROPERTY; GA DOPANT; POLYCRYSTALLINE; PULSE LASER DEPOSITION; ZINC MAGNESIUM OXIDE;

AMORPHOUS MATERIALS; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; DETERIORATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONS; EPITAXIAL GROWTH; GALLIUM; MAGNESIUM; MATERIALS HANDLING EQUIPMENT; PULSED LASER DEPOSITION; SAPPHIRE; SILICA; SILICON COMPOUNDS; SUBSTRATES; SUPERCONDUCTING FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC;

GALLIUM ALLOYS;

EID: 84857355179 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.12.020 Document Type: Article

Times cited : (40)

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