Interesting evidence for template-induced ferroelectric behavior in ultra-thin titanium dioxide films grown on (110) neodymium gallium oxide substrates

Advanced Functional Materials

Volumn 24, Issue 19, 2014, Pages 2844-2851

  Deepak, Nitin ^a,b   Caro, Miguel A ^a,b   Keeney, Lynette ^a   Pemble, Martyn E ^a,b   Whatmore, Roger W ^a,b,c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

anatase; atomic vapor deposition; chemical vapor deposition; ferroelectrics; strain

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; GALLIUM; GALLIUM ALLOYS; NEODYMIUM; OXIDE FILMS; OXIDES; POLARIZATION; SCANNING PROBE MICROSCOPY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION;

ATOMIC VAPOR DEPOSITION; ELEVATED TEMPERATURE; EXPERIMENTAL EVIDENCE; FERROELECTRIC BEHAVIOR; FERROELECTRIC CHARACTERISTICS; PIEZORESPONSE FORCE MICROSCOPY; SPONTANEOUS POLARIZATIONS; TITANIUM DIOXIDE FILMS;

TITANIUM DIOXIDE;

EID: 84900838481     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201302946     Document Type: Article

References (43)

1. K. Nomura, M. Hirano, Science 2003, 300, 1269.
2. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, R. S. Williams, Nat. Nanotechnol. 2008, 3, 429
3. X. Marti, V. Skumryev, C. Ferrater, M. V. García-Cuenca, M. Varela, F. Sánchez, J. Fontcuberta, Appl. Phys. Lett. 2010, 96, 222505.
4. J. H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. L. Li, S. Choudhury, W. Tian, M. E. Hawley, B. Craigo, A. K. Tagantsev, X. Q. Pan, S. K. Streiffer, L. Q. Chen, S. W. Kirchoefer, J. Levy, D. G. Schlom, Nature 2004, 430, 758.
5. M. Bibes, A. Barthélémy, IEEE Trans. Electron Devices 2007, 54, 1003.
6. J. F. Scott, Nat. Mater. 2007, 6, 256.
7. D. G. Schlom, L.-Q. Chen, C.-B. Eom, K. M. Rabe, S. K. Streiffer, J.-M. Triscone, Annu. Rev. Mater. Res. 2007, 37, 589.
8. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, C. B. Eom, Science 2004, 306, 1005.
9. R. S. Beach, J. A. Borchers, A. Matheny, R. W. Erwin, M. B. Salamon, B. Everitt, K. Pettit, J. J. Rhyne, C. P. Flynn, Phys. Rev. Lett. 1993, 70, 3502.
10. H. Sato, M. Naito, Phys. C 1997, 274, 221.
11. J. A. Bert, B. Kalisky, C. Bell, M. Kim, Y. Hikita, H. Y. Hwang, K. A. Moler, Nat. Phys. Lett. 2011, 7, 767.
12. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Appl. Phys. Lett. 2011, 99, 102903.
13. J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, L. Frey, Appl. Phys. Lett. 2011, 99, 112901.
14. B. A. Joyce, Rep. Prog. Phys. 1985, 48, 1637.
15. H. M. Christen, G. Eres, J. Phys.: Condens. Matter 2008, 20, 1.
16. K. L. Choy, Prog. Mater. Sci. 2003, 48, 57.
17. M. Leskela, M. Ritala, Thin Solid Films 2002, 409, 138.
18. A. Grünebohm, C. Ederer, P. Entel, Phys. Rev. B 2011, 84, 132105.
19. M. Horn, C. F. Schwerdtfeger, E. P. Meagher, Zeitschr. Kristallogr. Crystal. Mater. 1972, 136, 273.
20. G. Catalan, B. Noheda, J. McAneney, L. J. Sinnamon, J. M. Gregg, Phys. Rev. B 2005, 72, 020102(R).
21. T. Ohnishi, K. Takahashi, M. Nakamura, M. Kawasaki, M. Yoshimoto, H. Koinuma, Appl. Phys. Lett. 1999, 74, 2531.
22. A. Jasik, K. Kosiel, W. Strupifiski, M. Wesolowski, Thin Solid Films 2002, 412, 50.
23. C. W. Bark, P. Sharma, Y. Wang, S. H. Baek, S. Lee, S. Ryu, C. M. Folkman, T. R. Paudel, A. Kumar, S. V. Kalinin, A. Sokolov, E. Y. Tsymbal, M. S. Rzchowski, A. Gruverman, C. B. Eom, Nano Lett. 2012, 12, 1765-1771.
24. J. Shi, D.-K. Lee, H.-I. Yoo, J. Janek, K.-D. Becker, Phys. Chem. Chem. Phys. 2012, 14, 12930.
25. G. A. Samara, P. S. Peercy, Phys. Rev. B 1973, 7, 1131.
26. Y. Kim, A. N. Morozovska, A. Kumar, S. Jesse, E. A. Eliseev, F. Alibart, D. Strukov, S. V. Kalinin, ACS Nano 2012, 6, 7026.
27. K. Momma, F. Izumi, J. Appl. Cryst. 2011, 44, 1272.
28. R. D. Shannon, C. T. Prewitt, Acta Crystallogr. Section B 1969, 25, 925.
29. J. P. Perdew, A. Zunger, Phys. Rev. B 1981, 23, 5048.
30. G. Kresse, J. Furthmuller, Phys. Rev. B 1996, 54, 11169.
31. a) P. E. Blöchl, Phys. Rev. B 1994, 50, 17953
32. b) G. Kresse, D. Joubert, Phys. Rev. B 1999, 59, 1758.
33. K. H. Hellwege, A. M. Hellwege, Vol. 16, Springer, Berlin, 1981, 59.
34. a) J. Harada, T. Pedersen, Z. Barnea, Acta Crystallogr. Section A 1970, 26, 336
35. b) R. Clarke, J. Appl. Crystallogr. 1976, 9, 335.
36. J. C. Slater, Phys. Rev. 1950, 78, 748.
37. A. Bussmann-Holder, J. Phys.: Condens. Matter 2012, 24, 273202.
38. B. H. Park, L. S. Li, B. J. Gibbons, J. Y. Huang, Q. X. Jia, Appl. Phys. Lett. 2001, 79, 2797.
39. T. D. Nguyen, S. Mao, Y.-W. Yeh, P. K. Purohit, M. C. McAlpine, Adv. Mater. 2013, 25, 946.
40. D. Lee, A. Yoon, S. Y. Jang, J.-G. Yoon, J.-S. Chung, M. Kim, J. F. Scott, T. W. Noh, Phys. Rev. Lett. 2011, 107, 057602.
41. R. Ruh, P. W. R. Corfield, J. Am. Ceram. Soc. 1970, 53, 126.
42. P. F. Zhang, N. Deepak, L. Keeney, M. E. Pemble, R. W. Whatmore, Appl. Phys. Lett. 2012, 101, 112903.
43. B. J. Rodriguez, C. Callahan, S. V. Kalinin, R. Proksch, Nanotechnology 2007, 18, 475504.