Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 208-211

  Schwarzbäck, Thomas ^a   Kahle, Hermann ^a   Jetter, Michael ^a   Michler, Peter ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A3. Laser epitaxy; A3. Metalorganic vapor phase epitaxy; B2. AlGaInP; B2. Semiconducting III IV materials; B3. VECSEL

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PUMPING (LASER); QUANTUM WELL LASERS; SURFACE EMITTING LASERS; VAPOR PHASE EPITAXY;

ALGAINP; CONVENTIONAL STRUCTURES; LASER EPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTI QUANTUM WELL STRUCTURES; SEMICONDUCTING III-IV MATERIALS; VECSEL; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84900526862     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.09.051     Document Type: Article

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