Red lasers grown by all-solid-source molecular beam epitaxy

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages 425-429

  Savolainen, P ^a   Toivonen, M ^a   Pessa, M ^a   Corvini, P ^b   Jansen, M ^b   Nabiev, R F ^b  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b Coherent Semiconductor Group ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALL-SOLID-SOURCE MOLECULAR BEAM EPITAXY;

QUANTUM WELL LASERS;

EID: 0032668310     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/009     Document Type: Article

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