Red AlGaInP-VECSEL emitting at around 665 nm: Strain compensation and performance comparison of different epitaxial designs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8432, Issue , 2012, Pages

  Schwarzbäck, Thomas ^a   Kahle, Hermann ^a   Jetter, Michael ^a   Michler, Peter ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

AlGaInP; Laser; MOVPE; red emitting; semiconductor; strain compensation; VECSEL

Indexed keywords

ABSORPTION EFFICIENCY; ABSORPTION LENGTH; ACTIVE REGIONS; ALGAINP; CHIP DESIGN; CLADDING LAYER; COMPRESSIVE STRAIN; DIFFERENTIAL EFFICIENCY; LASER PARAMETERS; MULTI-QUANTUM WELL STRUCTURES; OUTPUT POWER; PERFORMANCE COMPARISON; QUATERNARY BARRIERS; RED EMITTING; SEPARATE CONFINEMENT HETEROSTRUCTURES; SPECTRAL RANGE; STRAIN-COMPENSATION; THRESHOLD PUMP POWER; V-SHAPED CAVITIES; VECSEL; VERTICAL-EXTERNAL-CAVITY;

DESIGN; DYNAMICS; EPITAXIAL GROWTH; GALLIUM; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTOR MATERIALS; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84862291199     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.922593     Document Type: Conference Paper

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