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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 32, Issue 4, 2014, Pages

Coexisting Bi and Se surface terminations of cleaved Bi2Se 3 single crystals

(5) Hewitt, Andrew S a Wang, Jingying a Boltersdorf, Jon a Maggard, Paul A a Dougherty, Daniel B a

a NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY; CORE LEVELS; PHOTONS; SINGLE CRYSTALS;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; ENERGY COMPONENTS; HIGH PROBABILITY; HIGH VACUUM; SAMPLE STORAGE; SAMPLE SURFACE; SURFACE TERMINATION; TOPOLOGICAL INSULATORS;

SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84899700187 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.4873689 Document Type: Article

Times cited : (38)

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